APA (7th ed.) Citation

Lee, H., Chang, T., Chang, E. Y., Rorsman, N., & Lee, C. (2021). Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE.

Chicago Style (17th ed.) Citation

Lee, Hsin-Ying, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, and Ching-Ting Lee. Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE, 2021.

MLA (8th ed.) Citation

Lee, Hsin-Ying, et al. Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE, 2021.