Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapo...

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Autores principales: Hsin-Ying Lee, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, Ching-Ting Lee
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04
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