Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulat...

por Hsin-Ying Lee, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, Ching-Ting Lee
Publicado 2021

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

por Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang
Publicado 2021

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

por Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang
Publicado 2018

Normally-OFF GaN MIS-HEMT With F^− Doped Gate Insulator Using Standard Ion Implantation

por Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang
Publicado 2018