Lee, H., Chang, T., Chang, E. Y., Rorsman, N., & Lee, C. (2021). Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE.
Style de citation Chicago (17e éd.)Lee, Hsin-Ying, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, et Ching-Ting Lee. Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE, 2021.
Style de citation MLA (8e éd.)Lee, Hsin-Ying, et al. Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer. IEEE, 2021.