Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x...

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Autores principales: Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/422e0d6c1666484292a392651170d402
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