Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x...

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Autores principales:	Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/422e0d6c1666484292a392651170d402
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spelling	oai:doaj.org-article:422e0d6c1666484292a392651170d4022021-12-02T15:06:09ZAnisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping10.1038/s41598-017-04854-82045-2322https://doaj.org/article/422e0d6c1666484292a392651170d4022017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04854-8https://doaj.org/toc/2045-2322Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x Ga1−x N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In x Ga1−x N layer releases through surface roughening and the 3D growth-mode.Guijuan ZhaoHuijie LiLianshan WangYulin MengZesheng JiFangzheng LiHongyuan WeiShaoyan YangZhanguo WangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Guijuan Zhao Huijie Li Lianshan Wang Yulin Meng Zesheng Ji Fangzheng Li Hongyuan Wei Shaoyan Yang Zhanguo Wang Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
description	Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x Ga1−x N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In x Ga1−x N layer releases through surface roughening and the 3D growth-mode.
format	article
author	Guijuan Zhao Huijie Li Lianshan Wang Yulin Meng Zesheng Ji Fangzheng Li Hongyuan Wei Shaoyan Yang Zhanguo Wang
author_facet	Guijuan Zhao Huijie Li Lianshan Wang Yulin Meng Zesheng Ji Fangzheng Li Hongyuan Wei Shaoyan Yang Zhanguo Wang
author_sort	Guijuan Zhao
title	Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
title_short	Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
title_full	Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
title_fullStr	Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
title_full_unstemmed	Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
title_sort	anisotropically biaxial strain in non-polar (112–0) plane in x ga1−x n/gan layers investigated by x-ray reciprocal space mapping
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/422e0d6c1666484292a392651170d402
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_version_	1718388577951285248

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

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