A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (<italic>Q&...
Enregistré dans:
| Auteurs principaux: | , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2019
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/42a379e7ba5e45bfbfcf7742447f34c9 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|