Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection

Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructura...

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Autores principales: Didier Fasquelle, Nathalie Verbrugghe, Stéphanie Députier
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/42eece2459834b698c850a4f0482522d
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