Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructura...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/42eece2459834b698c850a4f0482522d |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructural properties of these films were analyzed by using atomic force microscopy and X-ray diffraction. X-ray diffraction patterns only show WO<sub>3</sub> oxide phases. The AFM images show different morphologies with smaller grains for the film annealed at 400 °C. WO<sub>3</sub> sensing films and W heating elements were embedded in commercial cases for the fabrication of cost-effective gas sensors. The sensitivity and dynamic response of the sensors were analyzed under various concentrations of H<sub>2</sub>S, from 20 to 100 ppm, at SIMTRONICS SAS (3M Company, Saint Paul, MN, USA). A good sensitivity G/G<sub>0</sub> of about 6.6 under H<sub>2</sub>S 100 ppm was obtained with the best sensor. An interesting dynamic response was observed in particular with a short response time. Additionally, the evolution of the sensitivity was studied, and a conduction model was proposed for explaining the conduction mechanism under H<sub>2</sub>S exposition. |
|---|