Tungsten-Based Cost-Effective Gas Sensors for H2S Detection

Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO3 target at room temperature. The WO3 films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructura...

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Autores principales:	Didier Fasquelle, Nathalie Verbrugghe, Stéphanie Députier
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	WO<sub>3</sub> thin film gas sensor RF sputtering hydrogen sulfide Biochemistry QD415-436
Acceso en línea:	https://doaj.org/article/42eece2459834b698c850a4f0482522d
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spelling	oai:doaj.org-article:42eece2459834b698c850a4f0482522d2021-11-25T17:13:28ZTungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection10.3390/chemosensors91102952227-9040https://doaj.org/article/42eece2459834b698c850a4f0482522d2021-10-01T00:00:00Zhttps://www.mdpi.com/2227-9040/9/11/295https://doaj.org/toc/2227-9040Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructural properties of these films were analyzed by using atomic force microscopy and X-ray diffraction. X-ray diffraction patterns only show WO<sub>3</sub> oxide phases. The AFM images show different morphologies with smaller grains for the film annealed at 400 °C. WO<sub>3</sub> sensing films and W heating elements were embedded in commercial cases for the fabrication of cost-effective gas sensors. The sensitivity and dynamic response of the sensors were analyzed under various concentrations of H<sub>2</sub>S, from 20 to 100 ppm, at SIMTRONICS SAS (3M Company, Saint Paul, MN, USA). A good sensitivity G/G<sub>0</sub> of about 6.6 under H<sub>2</sub>S 100 ppm was obtained with the best sensor. An interesting dynamic response was observed in particular with a short response time. Additionally, the evolution of the sensitivity was studied, and a conduction model was proposed for explaining the conduction mechanism under H<sub>2</sub>S exposition.Didier FasquelleNathalie VerbruggheStéphanie DéputierMDPI AGarticleWO<sub>3</sub> thin filmgas sensorRF sputteringhydrogen sulfideBiochemistryQD415-436ENChemosensors, Vol 9, Iss 295, p 295 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	WO<sub>3</sub> thin film gas sensor RF sputtering hydrogen sulfide Biochemistry QD415-436
spellingShingle	WO<sub>3</sub> thin film gas sensor RF sputtering hydrogen sulfide Biochemistry QD415-436 Didier Fasquelle Nathalie Verbrugghe Stéphanie Députier Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
description	Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructural properties of these films were analyzed by using atomic force microscopy and X-ray diffraction. X-ray diffraction patterns only show WO<sub>3</sub> oxide phases. The AFM images show different morphologies with smaller grains for the film annealed at 400 °C. WO<sub>3</sub> sensing films and W heating elements were embedded in commercial cases for the fabrication of cost-effective gas sensors. The sensitivity and dynamic response of the sensors were analyzed under various concentrations of H<sub>2</sub>S, from 20 to 100 ppm, at SIMTRONICS SAS (3M Company, Saint Paul, MN, USA). A good sensitivity G/G<sub>0</sub> of about 6.6 under H<sub>2</sub>S 100 ppm was obtained with the best sensor. An interesting dynamic response was observed in particular with a short response time. Additionally, the evolution of the sensitivity was studied, and a conduction model was proposed for explaining the conduction mechanism under H<sub>2</sub>S exposition.
format	article
author	Didier Fasquelle Nathalie Verbrugghe Stéphanie Députier
author_facet	Didier Fasquelle Nathalie Verbrugghe Stéphanie Députier
author_sort	Didier Fasquelle
title	Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
title_short	Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
title_full	Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
title_fullStr	Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
title_full_unstemmed	Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
title_sort	tungsten-based cost-effective gas sensors for h<sub>2</sub>s detection
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/42eece2459834b698c850a4f0482522d
work_keys_str_mv	AT didierfasquelle tungstenbasedcosteffectivegassensorsforhsub2subsdetection AT nathalieverbrugghe tungstenbasedcosteffectivegassensorsforhsub2subsdetection AT stephaniedeputier tungstenbasedcosteffectivegassensorsforhsub2subsdetection
_version_	1718412583415840768

Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection

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