Atomic layer etching of graphene through controlled ion beam for graphene-based electronics

Abstract The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful tec...

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Autores principales:	Ki Seok Kim, You Jin Ji, Yeonsig Nam, Ki Hyun Kim, Eric Singh, Jin Yong Lee, Geun Young Yeom
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4339ca8c9383416699decb6ebe553787
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spelling	oai:doaj.org-article:4339ca8c9383416699decb6ebe5537872021-12-02T15:06:09ZAtomic layer etching of graphene through controlled ion beam for graphene-based electronics10.1038/s41598-017-02430-82045-2322https://doaj.org/article/4339ca8c9383416699decb6ebe5537872017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02430-8https://doaj.org/toc/2045-2322Abstract The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful technique due to barely no damage and no contamination. In this study, we demonstrated the ALE process of graphene layers without noticeably damaging the graphene by using a controlled low energy oxygen (O2 +/O+)-ion for chemical adsorption and a low energy Ar+-ion (11.2 eV) for physical desorption. In addition, using a trilayer graphene, mono- and bi-layer graphene could be successfully fabricated after one- and two-cycle ALE of the trilayer graphene, respectively. We believe that the ALE technique presented herein can be applicable to all layered materials such as graphene, black phosphorous and transition metal dichalcogenides which are important for next generation electronic devices.Ki Seok KimYou Jin JiYeonsig NamKi Hyun KimEric SinghJin Yong LeeGeun Young YeomNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ki Seok Kim You Jin Ji Yeonsig Nam Ki Hyun Kim Eric Singh Jin Yong Lee Geun Young Yeom Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
description	Abstract The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful technique due to barely no damage and no contamination. In this study, we demonstrated the ALE process of graphene layers without noticeably damaging the graphene by using a controlled low energy oxygen (O2 +/O+)-ion for chemical adsorption and a low energy Ar+-ion (11.2 eV) for physical desorption. In addition, using a trilayer graphene, mono- and bi-layer graphene could be successfully fabricated after one- and two-cycle ALE of the trilayer graphene, respectively. We believe that the ALE technique presented herein can be applicable to all layered materials such as graphene, black phosphorous and transition metal dichalcogenides which are important for next generation electronic devices.
format	article
author	Ki Seok Kim You Jin Ji Yeonsig Nam Ki Hyun Kim Eric Singh Jin Yong Lee Geun Young Yeom
author_facet	Ki Seok Kim You Jin Ji Yeonsig Nam Ki Hyun Kim Eric Singh Jin Yong Lee Geun Young Yeom
author_sort	Ki Seok Kim
title	Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
title_short	Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
title_full	Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
title_fullStr	Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
title_full_unstemmed	Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
title_sort	atomic layer etching of graphene through controlled ion beam for graphene-based electronics
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4339ca8c9383416699decb6ebe553787
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Atomic layer etching of graphene through controlled ion beam for graphene-based electronics

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