Atomic layer etching of graphene through controlled ion beam for graphene-based electronics
Abstract The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful tec...
Guardado en:
Autores principales: | Ki Seok Kim, You Jin Ji, Yeonsig Nam, Ki Hyun Kim, Eric Singh, Jin Yong Lee, Geun Young Yeom |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/4339ca8c9383416699decb6ebe553787 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
por: Jangyup Son, et al.
Publicado: (2018) -
Coherence in defect evolution data for the ion beam irradiated graphene
por: Sunmog Yeo, et al.
Publicado: (2018) -
An atomic carbon source for high temperature molecular beam epitaxy of graphene
por: J. D. Albar, et al.
Publicado: (2017) -
Noise diagnostics of graphene interconnects for atomic-scale electronics
por: László Pósa, et al.
Publicado: (2021) -
Anisotropic etching of graphite and graphene in a remote hydrogen plasma
por: D. Hug, et al.
Publicado: (2017)