Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species

In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered. However, the narrow memory window of current IDM stack structures (HfO<sub>2&...

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Autores principales: Giuk Kim, Taeho Kim, Sanghun Jeon
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/43675d21544f4618976af61fce41d817
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