Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species

In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered. However, the narrow memory window of current IDM stack structures (HfO<sub>2&...

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Autores principales:	Giuk Kim, Taeho Kim, Sanghun Jeon
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Dipole switching electric dipole hafnium oxide memory window nonvolatile memory Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/43675d21544f4618976af61fce41d817
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spelling	oai:doaj.org-article:43675d21544f4618976af61fce41d8172021-11-19T00:01:41ZInterfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species2168-673410.1109/JEDS.2020.3039746https://doaj.org/article/43675d21544f4618976af61fce41d8172021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9269423/https://doaj.org/toc/2168-6734In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered. However, the narrow memory window of current IDM stack structures (HfO<sub>2</sub>-TiO<sub>2</sub>-SiO<sub>2</sub>) has been a major constraint. Herein, we propose a structure that exploits SiOx interfacial dipole layers, thereby overcoming the memory window limitation of conventional IDM stack structures. A memory window up to 8.05 V was achieved by using SiOx switching species together with HfO and TiO encapsulating layers owing to the bidirectional oxygen relocation process, resulting in numerous electric dipoles. Furthermore, we found that the memory window increases as the ratio of SiO<sub>X</sub> to Si<sub>2<italic>p</italic></sub> and varies with the position of the SiO<sub>X</sub> layer, implying that the SiOx layer drives the switching mechanism. This IDM structure with an enhanced memory window can be used to develop practical NVM devices.Giuk KimTaeho KimSanghun JeonIEEEarticleDipole switchingelectric dipolehafnium oxidememory windownonvolatile memoryElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 57-60 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Dipole switching electric dipole hafnium oxide memory window nonvolatile memory Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Dipole switching electric dipole hafnium oxide memory window nonvolatile memory Electrical engineering. Electronics. Nuclear engineering TK1-9971 Giuk Kim Taeho Kim Sanghun Jeon Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
description	In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered. However, the narrow memory window of current IDM stack structures (HfO<sub>2</sub>-TiO<sub>2</sub>-SiO<sub>2</sub>) has been a major constraint. Herein, we propose a structure that exploits SiOx interfacial dipole layers, thereby overcoming the memory window limitation of conventional IDM stack structures. A memory window up to 8.05 V was achieved by using SiOx switching species together with HfO and TiO encapsulating layers owing to the bidirectional oxygen relocation process, resulting in numerous electric dipoles. Furthermore, we found that the memory window increases as the ratio of SiO<sub>X</sub> to Si<sub>2<italic>p</italic></sub> and varies with the position of the SiO<sub>X</sub> layer, implying that the SiOx layer drives the switching mechanism. This IDM structure with an enhanced memory window can be used to develop practical NVM devices.
format	article
author	Giuk Kim Taeho Kim Sanghun Jeon
author_facet	Giuk Kim Taeho Kim Sanghun Jeon
author_sort	Giuk Kim
title	Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
title_short	Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
title_full	Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
title_fullStr	Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
title_full_unstemmed	Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
title_sort	interfacial dipole modulation device with sio<sub>x</sub> switching species
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/43675d21544f4618976af61fce41d817
work_keys_str_mv	AT giukkim interfacialdipolemodulationdevicewithsiosubxsubswitchingspecies AT taehokim interfacialdipolemodulationdevicewithsiosubxsubswitchingspecies AT sanghunjeon interfacialdipolemodulationdevicewithsiosubxsubswitchingspecies
_version_	1718420665428606976

Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species

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