One dimensional transport in silicon nanowire junction-less field effect transistors

Abstract Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. Th...

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Autores principales:	Muhammad M. Mirza, Felix J. Schupp, Jan A. Mol, Donald A. MacLaren, G. Andrew D. Briggs, Douglas J. Paul
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/43a822918176408ba22986aa9ee34ad2
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spelling	oai:doaj.org-article:43a822918176408ba22986aa9ee34ad22021-12-02T11:40:44ZOne dimensional transport in silicon nanowire junction-less field effect transistors10.1038/s41598-017-03138-52045-2322https://doaj.org/article/43a822918176408ba22986aa9ee34ad22017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03138-5https://doaj.org/toc/2045-2322Abstract Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.Muhammad M. MirzaFelix J. SchuppJan A. MolDonald A. MacLarenG. Andrew D. BriggsDouglas J. PaulNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Muhammad M. Mirza Felix J. Schupp Jan A. Mol Donald A. MacLaren G. Andrew D. Briggs Douglas J. Paul One dimensional transport in silicon nanowire junction-less field effect transistors
description	Abstract Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.
format	article
author	Muhammad M. Mirza Felix J. Schupp Jan A. Mol Donald A. MacLaren G. Andrew D. Briggs Douglas J. Paul
author_facet	Muhammad M. Mirza Felix J. Schupp Jan A. Mol Donald A. MacLaren G. Andrew D. Briggs Douglas J. Paul
author_sort	Muhammad M. Mirza
title	One dimensional transport in silicon nanowire junction-less field effect transistors
title_short	One dimensional transport in silicon nanowire junction-less field effect transistors
title_full	One dimensional transport in silicon nanowire junction-less field effect transistors
title_fullStr	One dimensional transport in silicon nanowire junction-less field effect transistors
title_full_unstemmed	One dimensional transport in silicon nanowire junction-less field effect transistors
title_sort	one dimensional transport in silicon nanowire junction-less field effect transistors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/43a822918176408ba22986aa9ee34ad2
work_keys_str_mv	AT muhammadmmirza onedimensionaltransportinsiliconnanowirejunctionlessfieldeffecttransistors AT felixjschupp onedimensionaltransportinsiliconnanowirejunctionlessfieldeffecttransistors AT janamol onedimensionaltransportinsiliconnanowirejunctionlessfieldeffecttransistors AT donaldamaclaren onedimensionaltransportinsiliconnanowirejunctionlessfieldeffecttransistors AT gandrewdbriggs onedimensionaltransportinsiliconnanowirejunctionlessfieldeffecttransistors AT douglasjpaul onedimensionaltransportinsiliconnanowirejunctionlessfieldeffecttransistors
_version_	1718395577605029888

One dimensional transport in silicon nanowire junction-less field effect transistors

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