Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters

This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at...

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Auteurs principaux: Giovanni Migliazza, Emilio Carfagna, Giampaolo Buticchi, Fabio Immovilli, Emilio Lorenzani
Format: article
Langue:EN
Publié: MDPI AG 2021
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Accès en ligne:https://doaj.org/article/44701e5a0e0c42609a20f7c4964076ab
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