Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters

This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at...

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Autores principales: Giovanni Migliazza, Emilio Carfagna, Giampaolo Buticchi, Fabio Immovilli, Emilio Lorenzani
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Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:44701e5a0e0c42609a20f7c4964076ab2021-11-11T16:04:50ZEffect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters10.3390/en142173641996-1073https://doaj.org/article/44701e5a0e0c42609a20f7c4964076ab2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/21/7364https://doaj.org/toc/1996-1073This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis.Giovanni MigliazzaEmilio CarfagnaGiampaolo ButicchiFabio ImmovilliEmilio LorenzaniMDPI AGarticlecurrent source inverterphotovoltaicparasitic capacitancecommon modeground leakage currentTechnologyTENEnergies, Vol 14, Iss 7364, p 7364 (2021)
institution DOAJ
collection DOAJ
language EN
topic current source inverter
photovoltaic
parasitic capacitance
common mode
ground leakage current
Technology
T
spellingShingle current source inverter
photovoltaic
parasitic capacitance
common mode
ground leakage current
Technology
T
Giovanni Migliazza
Emilio Carfagna
Giampaolo Buticchi
Fabio Immovilli
Emilio Lorenzani
Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
description This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis.
format article
author Giovanni Migliazza
Emilio Carfagna
Giampaolo Buticchi
Fabio Immovilli
Emilio Lorenzani
author_facet Giovanni Migliazza
Emilio Carfagna
Giampaolo Buticchi
Fabio Immovilli
Emilio Lorenzani
author_sort Giovanni Migliazza
title Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_short Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_full Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_fullStr Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_full_unstemmed Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_sort effect of semiconductor parasitic capacitances on ground leakage current in three-phase current source inverters
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/44701e5a0e0c42609a20f7c4964076ab
work_keys_str_mv AT giovannimigliazza effectofsemiconductorparasiticcapacitancesongroundleakagecurrentinthreephasecurrentsourceinverters
AT emiliocarfagna effectofsemiconductorparasiticcapacitancesongroundleakagecurrentinthreephasecurrentsourceinverters
AT giampaolobuticchi effectofsemiconductorparasiticcapacitancesongroundleakagecurrentinthreephasecurrentsourceinverters
AT fabioimmovilli effectofsemiconductorparasiticcapacitancesongroundleakagecurrentinthreephasecurrentsourceinverters
AT emiliolorenzani effectofsemiconductorparasiticcapacitancesongroundleakagecurrentinthreephasecurrentsourceinverters
_version_ 1718432409737756672