Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/44701e5a0e0c42609a20f7c4964076ab |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|