Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at...
Enregistré dans:
Auteurs principaux: | , , , , |
---|---|
Format: | article |
Langue: | EN |
Publié: |
MDPI AG
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/44701e5a0e0c42609a20f7c4964076ab |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|