Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
The absence of a band gap in graphene hinders its use in electronics. Here, the authors open a band gap as large as 3.9 electronvolts in graphene grown by chemical vapour deposition by treating it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/44e2f1a7242c47eaa0ddf1c9bee9c6e1 |
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| Sumario: | The absence of a band gap in graphene hinders its use in electronics. Here, the authors open a band gap as large as 3.9 electronvolts in graphene grown by chemical vapour deposition by treating it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor. |
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