Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

The absence of a band gap in graphene hinders its use in electronics. Here, the authors open a band gap as large as 3.9 electronvolts in graphene grown by chemical vapour deposition by treating it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor.

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Autores principales:	Jangyup Son, Soogil Lee, Sang Jin Kim, Byung Cheol Park, Han-Koo Lee, Sanghoon Kim, Jae Hoon Kim, Byung Hee Hong, Jongill Hong
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/44e2f1a7242c47eaa0ddf1c9bee9c6e1
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spelling	oai:doaj.org-article:44e2f1a7242c47eaa0ddf1c9bee9c6e12021-12-02T15:35:19ZHydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor10.1038/ncomms132612041-1723https://doaj.org/article/44e2f1a7242c47eaa0ddf1c9bee9c6e12016-11-01T00:00:00Zhttps://doi.org/10.1038/ncomms13261https://doaj.org/toc/2041-1723The absence of a band gap in graphene hinders its use in electronics. Here, the authors open a band gap as large as 3.9 electronvolts in graphene grown by chemical vapour deposition by treating it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor.Jangyup SonSoogil LeeSang Jin KimByung Cheol ParkHan-Koo LeeSanghoon KimJae Hoon KimByung Hee HongJongill HongNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Jangyup Son Soogil Lee Sang Jin Kim Byung Cheol Park Han-Koo Lee Sanghoon Kim Jae Hoon Kim Byung Hee Hong Jongill Hong Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
description	The absence of a band gap in graphene hinders its use in electronics. Here, the authors open a band gap as large as 3.9 electronvolts in graphene grown by chemical vapour deposition by treating it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor.
format	article
author	Jangyup Son Soogil Lee Sang Jin Kim Byung Cheol Park Han-Koo Lee Sanghoon Kim Jae Hoon Kim Byung Hee Hong Jongill Hong
author_facet	Jangyup Son Soogil Lee Sang Jin Kim Byung Cheol Park Han-Koo Lee Sanghoon Kim Jae Hoon Kim Byung Hee Hong Jongill Hong
author_sort	Jangyup Son
title	Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
title_short	Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
title_full	Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
title_fullStr	Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
title_full_unstemmed	Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
title_sort	hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/44e2f1a7242c47eaa0ddf1c9bee9c6e1
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Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

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