Quantum simulation of the Hubbard model with dopant atoms in silicon
The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/463a6d0695bf4a0991c08849bbfce74b |
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| Sumario: | The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM. |
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