Quantum simulation of the Hubbard model with dopant atoms in silicon

The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with...

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Autores principales:	J. Salfi, J. A. Mol, R. Rahman, G. Klimeck, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/463a6d0695bf4a0991c08849bbfce74b
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spelling	oai:doaj.org-article:463a6d0695bf4a0991c08849bbfce74b2021-12-02T16:56:44ZQuantum simulation of the Hubbard model with dopant atoms in silicon10.1038/ncomms113422041-1723https://doaj.org/article/463a6d0695bf4a0991c08849bbfce74b2016-04-01T00:00:00Zhttps://doi.org/10.1038/ncomms11342https://doaj.org/toc/2041-1723The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.J. SalfiJ. A. MolR. RahmanG. KlimeckM. Y. SimmonsL. C. L. HollenbergS. RoggeNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q J. Salfi J. A. Mol R. Rahman G. Klimeck M. Y. Simmons L. C. L. Hollenberg S. Rogge Quantum simulation of the Hubbard model with dopant atoms in silicon
description	The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.
format	article
author	J. Salfi J. A. Mol R. Rahman G. Klimeck M. Y. Simmons L. C. L. Hollenberg S. Rogge
author_facet	J. Salfi J. A. Mol R. Rahman G. Klimeck M. Y. Simmons L. C. L. Hollenberg S. Rogge
author_sort	J. Salfi
title	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_short	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_full	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_fullStr	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_full_unstemmed	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_sort	quantum simulation of the hubbard model with dopant atoms in silicon
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/463a6d0695bf4a0991c08849bbfce74b
work_keys_str_mv	AT jsalfi quantumsimulationofthehubbardmodelwithdopantatomsinsilicon AT jamol quantumsimulationofthehubbardmodelwithdopantatomsinsilicon AT rrahman quantumsimulationofthehubbardmodelwithdopantatomsinsilicon AT gklimeck quantumsimulationofthehubbardmodelwithdopantatomsinsilicon AT mysimmons quantumsimulationofthehubbardmodelwithdopantatomsinsilicon AT lclhollenberg quantumsimulationofthehubbardmodelwithdopantatomsinsilicon AT srogge quantumsimulationofthehubbardmodelwithdopantatomsinsilicon
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Quantum simulation of the Hubbard model with dopant atoms in silicon

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