Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electrore...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: H. Wang, Z. R. Liu, H. Y. Yoong, T. R. Paudel, J. X. Xiao, R. Guo, W. N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian, J. S. Chen
Format: article
Langue:EN
Publié: Nature Portfolio 2018
Sujets:
Q
Accès en ligne:https://doaj.org/article/46ec1a41c4b4432b9ba50898b838dd1a
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!