Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electrore...

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Autores principales:	H. Wang, Z. R. Liu, H. Y. Yoong, T. R. Paudel, J. X. Xiao, R. Guo, W. N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian, J. S. Chen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/46ec1a41c4b4432b9ba50898b838dd1a
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spelling	oai:doaj.org-article:46ec1a41c4b4432b9ba50898b838dd1a2021-12-02T17:31:42ZDirect observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit10.1038/s41467-018-05662-y2041-1723https://doaj.org/article/46ec1a41c4b4432b9ba50898b838dd1a2018-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-05662-yhttps://doaj.org/toc/2041-1723High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.H. WangZ. R. LiuH. Y. YoongT. R. PaudelJ. X. XiaoR. GuoW. N. LinP. YangJ. WangG. M. ChowT. VenkatesanE. Y. TsymbalH. TianJ. S. ChenNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q H. Wang Z. R. Liu H. Y. Yoong T. R. Paudel J. X. Xiao R. Guo W. N. Lin P. Yang J. Wang G. M. Chow T. Venkatesan E. Y. Tsymbal H. Tian J. S. Chen Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
description	High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.
format	article
author	H. Wang Z. R. Liu H. Y. Yoong T. R. Paudel J. X. Xiao R. Guo W. N. Lin P. Yang J. Wang G. M. Chow T. Venkatesan E. Y. Tsymbal H. Tian J. S. Chen
author_facet	H. Wang Z. R. Liu H. Y. Yoong T. R. Paudel J. X. Xiao R. Guo W. N. Lin P. Yang J. Wang G. M. Chow T. Venkatesan E. Y. Tsymbal H. Tian J. S. Chen
author_sort	H. Wang
title	Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
title_short	Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
title_full	Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
title_fullStr	Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
title_full_unstemmed	Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
title_sort	direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/46ec1a41c4b4432b9ba50898b838dd1a
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Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

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