Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, a...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
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MDPI AG
2021
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| Accès en ligne: | https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc |
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