Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors

Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, a...

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Autores principales: Nataliya Vorobyeva, Marina Rumyantseva, Vadim Platonov, Darya Filatova, Artem Chizhov, Artem Marikutsa, Ivan Bozhev, Alexander Gaskov
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
oxide materials
semiconductor gas sensor
Ga<sub>2</sub>O<sub>3</sub>
doping
carbon monoxide CO
ammonia NH<sub>3</sub>
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc
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https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc

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