Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, a...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc |
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| Sumario: | Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga<sub>2</sub>O<sub>3</sub> and Ga<sub>2</sub>O<sub>3</sub>(Sn) samples with tin content of 0–13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of β-Ga<sub>2</sub>O<sub>3</sub> formation. The sensor responses of all Ga<sub>2</sub>O<sub>3</sub>(Sn) samples to CO and NH<sub>3</sub> have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga<sub>2</sub>O<sub>3</sub> phases and segregation of SnO<sub>2</sub> on the surface of Ga<sub>2</sub>O<sub>3</sub>(Sn) grains. |
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