Ga2O3(Sn) Oxides for High-Temperature Gas Sensors

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga2O3 with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, a...

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Autores principales:	Nataliya Vorobyeva, Marina Rumyantseva, Vadim Platonov, Darya Filatova, Artem Chizhov, Artem Marikutsa, Ivan Bozhev, Alexander Gaskov
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	oxide materials semiconductor gas sensor Ga<sub>2</sub>O<sub>3</sub> doping carbon monoxide CO ammonia NH<sub>3</sub> Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc
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id	oai:doaj.org-article:47794ee4eafc46eba43beba40da1f0fc
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spelling	oai:doaj.org-article:47794ee4eafc46eba43beba40da1f0fc2021-11-25T18:30:59ZGa<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors10.3390/nano111129382079-4991https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2938https://doaj.org/toc/2079-4991Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga<sub>2</sub>O<sub>3</sub> and Ga<sub>2</sub>O<sub>3</sub>(Sn) samples with tin content of 0–13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of β-Ga<sub>2</sub>O<sub>3</sub> formation. The sensor responses of all Ga<sub>2</sub>O<sub>3</sub>(Sn) samples to CO and NH<sub>3</sub> have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga<sub>2</sub>O<sub>3</sub> phases and segregation of SnO<sub>2</sub> on the surface of Ga<sub>2</sub>O<sub>3</sub>(Sn) grains.Nataliya VorobyevaMarina RumyantsevaVadim PlatonovDarya FilatovaArtem ChizhovArtem MarikutsaIvan BozhevAlexander GaskovMDPI AGarticleoxide materialssemiconductor gas sensorGa<sub>2</sub>O<sub>3</sub>dopingcarbon monoxide COammonia NH<sub>3</sub>ChemistryQD1-999ENNanomaterials, Vol 11, Iss 2938, p 2938 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	oxide materials semiconductor gas sensor Ga<sub>2</sub>O<sub>3</sub> doping carbon monoxide CO ammonia NH<sub>3</sub> Chemistry QD1-999
spellingShingle	oxide materials semiconductor gas sensor Ga<sub>2</sub>O<sub>3</sub> doping carbon monoxide CO ammonia NH<sub>3</sub> Chemistry QD1-999 Nataliya Vorobyeva Marina Rumyantseva Vadim Platonov Darya Filatova Artem Chizhov Artem Marikutsa Ivan Bozhev Alexander Gaskov Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
description	Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga<sub>2</sub>O<sub>3</sub> and Ga<sub>2</sub>O<sub>3</sub>(Sn) samples with tin content of 0–13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of β-Ga<sub>2</sub>O<sub>3</sub> formation. The sensor responses of all Ga<sub>2</sub>O<sub>3</sub>(Sn) samples to CO and NH<sub>3</sub> have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga<sub>2</sub>O<sub>3</sub> phases and segregation of SnO<sub>2</sub> on the surface of Ga<sub>2</sub>O<sub>3</sub>(Sn) grains.
format	article
author	Nataliya Vorobyeva Marina Rumyantseva Vadim Platonov Darya Filatova Artem Chizhov Artem Marikutsa Ivan Bozhev Alexander Gaskov
author_facet	Nataliya Vorobyeva Marina Rumyantseva Vadim Platonov Darya Filatova Artem Chizhov Artem Marikutsa Ivan Bozhev Alexander Gaskov
author_sort	Nataliya Vorobyeva
title	Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
title_short	Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
title_full	Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
title_fullStr	Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
title_full_unstemmed	Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors
title_sort	ga<sub>2</sub>o<sub>3</sub>(sn) oxides for high-temperature gas sensors
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc
work_keys_str_mv	AT nataliyavorobyeva gasub2subosub3subsnoxidesforhightemperaturegassensors AT marinarumyantseva gasub2subosub3subsnoxidesforhightemperaturegassensors AT vadimplatonov gasub2subosub3subsnoxidesforhightemperaturegassensors AT daryafilatova gasub2subosub3subsnoxidesforhightemperaturegassensors AT artemchizhov gasub2subosub3subsnoxidesforhightemperaturegassensors AT artemmarikutsa gasub2subosub3subsnoxidesforhightemperaturegassensors AT ivanbozhev gasub2subosub3subsnoxidesforhightemperaturegassensors AT alexandergaskov gasub2subosub3subsnoxidesforhightemperaturegassensors
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Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors

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