Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors

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Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, a...

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Détails bibliographiques
Auteurs principaux:	Nataliya Vorobyeva, Marina Rumyantseva, Vadim Platonov, Darya Filatova, Artem Chizhov, Artem Marikutsa, Ivan Bozhev, Alexander Gaskov
Format:	article
Langue:	EN
Publié:	MDPI AG 2021
Sujets:	oxide materials semiconductor gas sensor Ga<sub>2</sub>O<sub>3</sub> doping carbon monoxide CO ammonia NH<sub>3</sub> Chemistry QD1-999
Accès en ligne:	https://doaj.org/article/47794ee4eafc46eba43beba40da1f0fc
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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