High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

Abstract The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit...

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Autores principales: Erica Guerriero, Paolo Pedrinazzi, Aida Mansouri, Omid Habibpour, Michael Winters, Niklas Rorsman, Ashkan Behnam, Enrique A. Carrion, Amaia Pesquera, Alba Centeno, Amaia Zurutuza, Eric Pop, Herbert Zirath, Roman Sordan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
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Science
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Acceso en línea:https://doaj.org/article/4826c222f56243a6b64589a145f7ec5d
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https://doaj.org/article/4826c222f56243a6b64589a145f7ec5d

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