High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
Abstract The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit...
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Nature Portfolio
2017
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oai:doaj.org-article:4826c222f56243a6b64589a145f7ec5d2021-12-02T11:41:00ZHigh-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide10.1038/s41598-017-02541-22045-2322https://doaj.org/article/4826c222f56243a6b64589a145f7ec5d2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02541-2https://doaj.org/toc/2045-2322Abstract The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f max/f T > 3, A v > 30 dB, and S 21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance ~600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.Erica GuerrieroPaolo PedrinazziAida MansouriOmid HabibpourMichael WintersNiklas RorsmanAshkan BehnamEnrique A. CarrionAmaia PesqueraAlba CentenoAmaia ZurutuzaEric PopHerbert ZirathRoman SordanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017) |
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DOAJ |
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Medicine R Science Q |
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Medicine R Science Q Erica Guerriero Paolo Pedrinazzi Aida Mansouri Omid Habibpour Michael Winters Niklas Rorsman Ashkan Behnam Enrique A. Carrion Amaia Pesquera Alba Centeno Amaia Zurutuza Eric Pop Herbert Zirath Roman Sordan High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
| description |
Abstract The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f max/f T > 3, A v > 30 dB, and S 21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance ~600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain. |
| format |
article |
| author |
Erica Guerriero Paolo Pedrinazzi Aida Mansouri Omid Habibpour Michael Winters Niklas Rorsman Ashkan Behnam Enrique A. Carrion Amaia Pesquera Alba Centeno Amaia Zurutuza Eric Pop Herbert Zirath Roman Sordan |
| author_facet |
Erica Guerriero Paolo Pedrinazzi Aida Mansouri Omid Habibpour Michael Winters Niklas Rorsman Ashkan Behnam Enrique A. Carrion Amaia Pesquera Alba Centeno Amaia Zurutuza Eric Pop Herbert Zirath Roman Sordan |
| author_sort |
Erica Guerriero |
| title |
High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
| title_short |
High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
| title_full |
High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
| title_fullStr |
High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
| title_full_unstemmed |
High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
| title_sort |
high-gain graphene transistors with a thin alox top-gate oxide |
| publisher |
Nature Portfolio |
| publishDate |
2017 |
| url |
https://doaj.org/article/4826c222f56243a6b64589a145f7ec5d |
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