Valley interference and spin exchange at the atomic scale in silicon

Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy compatible with existing technology where the exchange...

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Autores principales:	B. Voisin, J. Bocquel, A. Tankasala, M. Usman, J. Salfi, R. Rahman, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/482d5468555841919a3bcc07ec60082d
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spelling	oai:doaj.org-article:482d5468555841919a3bcc07ec60082d2021-12-02T14:42:14ZValley interference and spin exchange at the atomic scale in silicon10.1038/s41467-020-19835-12041-1723https://doaj.org/article/482d5468555841919a3bcc07ec60082d2020-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-19835-1https://doaj.org/toc/2041-1723Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy compatible with existing technology where the exchange is insensitive to interference.B. VoisinJ. BocquelA. TankasalaM. UsmanJ. SalfiR. RahmanM. Y. SimmonsL. C. L. HollenbergS. RoggeNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q B. Voisin J. Bocquel A. Tankasala M. Usman J. Salfi R. Rahman M. Y. Simmons L. C. L. Hollenberg S. Rogge Valley interference and spin exchange at the atomic scale in silicon
description	Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy compatible with existing technology where the exchange is insensitive to interference.
format	article
author	B. Voisin J. Bocquel A. Tankasala M. Usman J. Salfi R. Rahman M. Y. Simmons L. C. L. Hollenberg S. Rogge
author_facet	B. Voisin J. Bocquel A. Tankasala M. Usman J. Salfi R. Rahman M. Y. Simmons L. C. L. Hollenberg S. Rogge
author_sort	B. Voisin
title	Valley interference and spin exchange at the atomic scale in silicon
title_short	Valley interference and spin exchange at the atomic scale in silicon
title_full	Valley interference and spin exchange at the atomic scale in silicon
title_fullStr	Valley interference and spin exchange at the atomic scale in silicon
title_full_unstemmed	Valley interference and spin exchange at the atomic scale in silicon
title_sort	valley interference and spin exchange at the atomic scale in silicon
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/482d5468555841919a3bcc07ec60082d
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Valley interference and spin exchange at the atomic scale in silicon

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