Valley interference and spin exchange at the atomic scale in silicon
Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy compatible with existing technology where the exchange...
Guardado en:
Autores principales: | B. Voisin, J. Bocquel, A. Tankasala, M. Usman, J. Salfi, R. Rahman, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
|
Materias: | |
Acceso en línea: | https://doaj.org/article/482d5468555841919a3bcc07ec60082d |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Quantum simulation of the Hubbard model with dopant atoms in silicon
por: J. Salfi, et al.
Publicado: (2016) -
Quantifying exchange forces of a spin spiral on the atomic scale
por: Nadine Hauptmann, et al.
Publicado: (2020) -
Two-electron spin correlations in precision placed donors in silicon
por: M. A. Broome, et al.
Publicado: (2018) -
Atomic-scale disproportionation in amorphous silicon monoxide
por: Akihiko Hirata, et al.
Publicado: (2016) -
Lithography for robust and editable atomic-scale silicon devices and memories
por: Roshan Achal, et al.
Publicado: (2018)