Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

The knowledge of the electronic structure of composite material is essential for tailoring their properties. The authors introduce a method based on standing wave angle-resolved hard X-ray photoemission to determine the element- and momentum-resolved electronic band structure simultaneously.

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Autores principales: Slavomír Nemšák, Mathias Gehlmann, Cheng-Tai Kuo, Shih-Chieh Lin, Christoph Schlueter, Ewa Mlynczak, Tien-Lin Lee, Lukasz Plucinski, Hubert Ebert, Igor Di Marco, Ján Minár, Claus M. Schneider, Charles S. Fadley
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Science
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Acceso en línea:https://doaj.org/article/4888dff6d3c348499dc349c9ceeccd41
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https://doaj.org/article/4888dff6d3c348499dc349c9ceeccd41

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