Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

The knowledge of the electronic structure of composite material is essential for tailoring their properties. The authors introduce a method based on standing wave angle-resolved hard X-ray photoemission to determine the element- and momentum-resolved electronic band structure simultaneously.

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Autores principales: Slavomír Nemšák, Mathias Gehlmann, Cheng-Tai Kuo, Shih-Chieh Lin, Christoph Schlueter, Ewa Mlynczak, Tien-Lin Lee, Lukasz Plucinski, Hubert Ebert, Igor Di Marco, Ján Minár, Claus M. Schneider, Charles S. Fadley
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Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/4888dff6d3c348499dc349c9ceeccd41
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spelling oai:doaj.org-article:4888dff6d3c348499dc349c9ceeccd412021-12-02T15:33:55ZElement- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide10.1038/s41467-018-05823-z2041-1723https://doaj.org/article/4888dff6d3c348499dc349c9ceeccd412018-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-05823-zhttps://doaj.org/toc/2041-1723The knowledge of the electronic structure of composite material is essential for tailoring their properties. The authors introduce a method based on standing wave angle-resolved hard X-ray photoemission to determine the element- and momentum-resolved electronic band structure simultaneously.Slavomír NemšákMathias GehlmannCheng-Tai KuoShih-Chieh LinChristoph SchlueterEwa MlynczakTien-Lin LeeLukasz PlucinskiHubert EbertIgor Di MarcoJán MinárClaus M. SchneiderCharles S. FadleyNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Slavomír Nemšák
Mathias Gehlmann
Cheng-Tai Kuo
Shih-Chieh Lin
Christoph Schlueter
Ewa Mlynczak
Tien-Lin Lee
Lukasz Plucinski
Hubert Ebert
Igor Di Marco
Ján Minár
Claus M. Schneider
Charles S. Fadley
Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
description The knowledge of the electronic structure of composite material is essential for tailoring their properties. The authors introduce a method based on standing wave angle-resolved hard X-ray photoemission to determine the element- and momentum-resolved electronic band structure simultaneously.
format article
author Slavomír Nemšák
Mathias Gehlmann
Cheng-Tai Kuo
Shih-Chieh Lin
Christoph Schlueter
Ewa Mlynczak
Tien-Lin Lee
Lukasz Plucinski
Hubert Ebert
Igor Di Marco
Ján Minár
Claus M. Schneider
Charles S. Fadley
author_facet Slavomír Nemšák
Mathias Gehlmann
Cheng-Tai Kuo
Shih-Chieh Lin
Christoph Schlueter
Ewa Mlynczak
Tien-Lin Lee
Lukasz Plucinski
Hubert Ebert
Igor Di Marco
Ján Minár
Claus M. Schneider
Charles S. Fadley
author_sort Slavomír Nemšák
title Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
title_short Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
title_full Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
title_fullStr Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
title_full_unstemmed Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
title_sort element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/4888dff6d3c348499dc349c9ceeccd41
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