Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjuste...

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Autores principales:	Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/491943fc27bc4b96ba5c7795a09df482
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spelling	oai:doaj.org-article:491943fc27bc4b96ba5c7795a09df4822021-12-02T15:22:56ZEmission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing10.1038/s41598-020-80796-y2045-2322https://doaj.org/article/491943fc27bc4b96ba5c7795a09df4822021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80796-yhttps://doaj.org/toc/2045-2322Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.Dengkui WangXian GaoJilong TangXuan FangDan FangXinwei WangFengyuan LinXiaohua WangRui ChenZhipeng WeiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dengkui Wang Xian Gao Jilong Tang Xuan Fang Dan Fang Xinwei Wang Fengyuan Lin Xiaohua Wang Rui Chen Zhipeng Wei Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
description	Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
format	article
author	Dengkui Wang Xian Gao Jilong Tang Xuan Fang Dan Fang Xinwei Wang Fengyuan Lin Xiaohua Wang Rui Chen Zhipeng Wei
author_facet	Dengkui Wang Xian Gao Jilong Tang Xuan Fang Dan Fang Xinwei Wang Fengyuan Lin Xiaohua Wang Rui Chen Zhipeng Wei
author_sort	Dengkui Wang
title	Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
title_short	Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
title_full	Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
title_fullStr	Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
title_full_unstemmed	Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
title_sort	emission characteristics variation of gaas0.92sb0.08/al0.3ga0.7as strained multiple quantum wells caused by rapid thermal annealing
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/491943fc27bc4b96ba5c7795a09df482
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_version_	1718387380511047680

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

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