Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using...

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Autores principales: Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
GaN
HEMT
laser lift-off
device transfer
self-heating effect
Crystallography
QD901-999
Acceso en línea:https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
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https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e

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