Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using...

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Autores principales:	Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	GaN HEMT laser lift-off device transfer self-heating effect Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
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spelling	oai:doaj.org-article:499bcfa0b2c14cde967ac96b2b7f0f8e2021-11-25T17:19:34ZSubstrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors10.3390/cryst111114142073-4352https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e2021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1414https://doaj.org/toc/2073-4352We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.Sung-Jae ChangKyu-Jun ChoSang-Youl LeeHwan-Hee JeongJae-Hoon LeeHyun-Wook JungSung-Bum BaeIl-Gyu ChoiHae-Cheon KimHo-Kyun AhnJong-Won LimMDPI AGarticleGaNHEMTlaser lift-offdevice transferself-heating effectCrystallographyQD901-999ENCrystals, Vol 11, Iss 1414, p 1414 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN HEMT laser lift-off device transfer self-heating effect Crystallography QD901-999
spellingShingle	GaN HEMT laser lift-off device transfer self-heating effect Crystallography QD901-999 Sung-Jae Chang Kyu-Jun Cho Sang-Youl Lee Hwan-Hee Jeong Jae-Hoon Lee Hyun-Wook Jung Sung-Bum Bae Il-Gyu Choi Hae-Cheon Kim Ho-Kyun Ahn Jong-Won Lim Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
description	We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.
format	article
author	Sung-Jae Chang Kyu-Jun Cho Sang-Youl Lee Hwan-Hee Jeong Jae-Hoon Lee Hyun-Wook Jung Sung-Bum Bae Il-Gyu Choi Hae-Cheon Kim Ho-Kyun Ahn Jong-Won Lim
author_facet	Sung-Jae Chang Kyu-Jun Cho Sang-Youl Lee Hwan-Hee Jeong Jae-Hoon Lee Hyun-Wook Jung Sung-Bum Bae Il-Gyu Choi Hae-Cheon Kim Ho-Kyun Ahn Jong-Won Lim
author_sort	Sung-Jae Chang
title	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
title_short	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
title_full	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
title_fullStr	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
title_full_unstemmed	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
title_sort	substrate effects on the electrical properties in gan-based high electron mobility transistors
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

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