Purely antiferromagnetic magnetoelectric random access memory
Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/4a7b22d0c264488a9554a3400f0b3052 |
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