Purely antiferromagnetic magnetoelectric random access memory
Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.
Guardado en:
Autores principales: | , , , , , , , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/4a7b22d0c264488a9554a3400f0b3052 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sumario: | Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts. |
---|