Purely antiferromagnetic magnetoelectric random access memory

Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.

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Autores principales:	Tobias Kosub, Martin Kopte, Ruben Hühne, Patrick Appel, Brendan Shields, Patrick Maletinsky, René Hübner, Maciej Oskar Liedke, Jürgen Fassbender, Oliver G. Schmidt, Denys Makarov
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/4a7b22d0c264488a9554a3400f0b3052
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spelling	oai:doaj.org-article:4a7b22d0c264488a9554a3400f0b30522021-12-02T14:42:37ZPurely antiferromagnetic magnetoelectric random access memory10.1038/ncomms139852041-1723https://doaj.org/article/4a7b22d0c264488a9554a3400f0b30522017-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms13985https://doaj.org/toc/2041-1723Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.Tobias KosubMartin KopteRuben HühnePatrick AppelBrendan ShieldsPatrick MaletinskyRené HübnerMaciej Oskar LiedkeJürgen FassbenderOliver G. SchmidtDenys MakarovNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Tobias Kosub Martin Kopte Ruben Hühne Patrick Appel Brendan Shields Patrick Maletinsky René Hübner Maciej Oskar Liedke Jürgen Fassbender Oliver G. Schmidt Denys Makarov Purely antiferromagnetic magnetoelectric random access memory
description	Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.
format	article
author	Tobias Kosub Martin Kopte Ruben Hühne Patrick Appel Brendan Shields Patrick Maletinsky René Hübner Maciej Oskar Liedke Jürgen Fassbender Oliver G. Schmidt Denys Makarov
author_facet	Tobias Kosub Martin Kopte Ruben Hühne Patrick Appel Brendan Shields Patrick Maletinsky René Hübner Maciej Oskar Liedke Jürgen Fassbender Oliver G. Schmidt Denys Makarov
author_sort	Tobias Kosub
title	Purely antiferromagnetic magnetoelectric random access memory
title_short	Purely antiferromagnetic magnetoelectric random access memory
title_full	Purely antiferromagnetic magnetoelectric random access memory
title_fullStr	Purely antiferromagnetic magnetoelectric random access memory
title_full_unstemmed	Purely antiferromagnetic magnetoelectric random access memory
title_sort	purely antiferromagnetic magnetoelectric random access memory
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4a7b22d0c264488a9554a3400f0b3052
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Purely antiferromagnetic magnetoelectric random access memory

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