Purely antiferromagnetic magnetoelectric random access memory

Purely antiferromagnetic magnetoelectric random access memory

Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.

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Detalles Bibliográficos
Autores principales: Tobias Kosub, Martin Kopte, Ruben Hühne, Patrick Appel, Brendan Shields, Patrick Maletinsky, René Hübner, Maciej Oskar Liedke, Jürgen Fassbender, Oliver G. Schmidt, Denys Makarov
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
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Acceso en línea:https://doaj.org/article/4a7b22d0c264488a9554a3400f0b3052
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