Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation

Abstract We synthesised a crystalline MoS2 film from as-sputtered amorphous film by applying an electron beam irradiation (EBI) process. A collimated electron beam (60 mm dia.) with an energy of 1 kV was irradiated for only 1 min to achieve crystallisation without an additional heating process. Afte...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Bong Ho Kim, Hyun Ho Gu, Young Joon Yoon
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
R
Q
Acceso en línea:https://doaj.org/article/4b30a12fc99545f49eba9bf49b546bff
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!