Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Abstract Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel...

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Auteurs principaux: Po-Hsien Cheng, Chun-Yuan Wang, Teng-Jan Chang, Tsung-Han Shen, Yu-Syuan Cai, Miin-Jang Chen
Format: article
Langue:EN
Publié: Nature Portfolio 2017
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Accès en ligne:https://doaj.org/article/4b63f1a5b5514f2fb287c1796b917329
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