Cita APA (7a ed.)

Cheng, P., Wang, C., Chang, T., Shen, T., Cai, Y., & Chen, M. (2017). Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition. Nature Portfolio.

Cita Chicago Style (17a ed.)

Cheng, Po-Hsien, Chun-Yuan Wang, Teng-Jan Chang, Tsung-Han Shen, Yu-Syuan Cai, y Miin-Jang Chen. Room-temperature Field Effect Transistors with Metallic Ultrathin TiN-based Channel Prepared by Atomic Layer Delta Doping and Deposition. Nature Portfolio, 2017.

Cita MLA (8a ed.)

Cheng, Po-Hsien, et al. Room-temperature Field Effect Transistors with Metallic Ultrathin TiN-based Channel Prepared by Atomic Layer Delta Doping and Deposition. Nature Portfolio, 2017.

Precaución: Estas citas no son 100% exactas.