Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Abstract Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel...

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Autores principales:	Po-Hsien Cheng, Chun-Yuan Wang, Teng-Jan Chang, Tsung-Han Shen, Yu-Syuan Cai, Miin-Jang Chen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/4b63f1a5b5514f2fb287c1796b917329
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spelling	oai:doaj.org-article:4b63f1a5b5514f2fb287c1796b9173292021-12-02T11:52:16ZRoom-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition10.1038/s41598-017-00986-z2045-2322https://doaj.org/article/4b63f1a5b5514f2fb287c1796b9173292017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00986-zhttps://doaj.org/toc/2045-2322Abstract Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistance was achieved in the metallic channel transistors, in which the oxygen-doped TiN ultrathin-body channels were prepared by the atomic layer delta doping and deposition (AL3D) with precise control of the channel thickness and electron concentration. The decrease of channel thickness leads to the reduction in electron concentration and the blue shift of absorption spectrum, which can be explained by the onset of quantum confinement effect. The increase of oxygen incorporation results in the increase of interband gap energy, also giving rise to the decrease in electron concentration and the blue shift of absorption spectrum. Because of the significant decrease in electron concentration, the screening effect was greatly suppressed in the metallic channel. Therefore, the channel modulation by the gate electric field was achieved at room temperature due to the quantum confinement and suppressed screening effect with the thickness down to 4.8 nm and the oxygen content up to 35% in the oxygen-doped TiN ultrathin-body channel.Po-Hsien ChengChun-Yuan WangTeng-Jan ChangTsung-Han ShenYu-Syuan CaiMiin-Jang ChenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Po-Hsien Cheng Chun-Yuan Wang Teng-Jan Chang Tsung-Han Shen Yu-Syuan Cai Miin-Jang Chen Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
description	Abstract Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistance was achieved in the metallic channel transistors, in which the oxygen-doped TiN ultrathin-body channels were prepared by the atomic layer delta doping and deposition (AL3D) with precise control of the channel thickness and electron concentration. The decrease of channel thickness leads to the reduction in electron concentration and the blue shift of absorption spectrum, which can be explained by the onset of quantum confinement effect. The increase of oxygen incorporation results in the increase of interband gap energy, also giving rise to the decrease in electron concentration and the blue shift of absorption spectrum. Because of the significant decrease in electron concentration, the screening effect was greatly suppressed in the metallic channel. Therefore, the channel modulation by the gate electric field was achieved at room temperature due to the quantum confinement and suppressed screening effect with the thickness down to 4.8 nm and the oxygen content up to 35% in the oxygen-doped TiN ultrathin-body channel.
format	article
author	Po-Hsien Cheng Chun-Yuan Wang Teng-Jan Chang Tsung-Han Shen Yu-Syuan Cai Miin-Jang Chen
author_facet	Po-Hsien Cheng Chun-Yuan Wang Teng-Jan Chang Tsung-Han Shen Yu-Syuan Cai Miin-Jang Chen
author_sort	Po-Hsien Cheng
title	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
title_short	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
title_full	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
title_fullStr	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
title_full_unstemmed	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
title_sort	room-temperature field effect transistors with metallic ultrathin tin-based channel prepared by atomic layer delta doping and deposition
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/4b63f1a5b5514f2fb287c1796b917329
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Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

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