Insulator to metal transition in WO3 induced by electrolyte gating
Electrolyte gating: Hydrogenation mechanism in WO3 The mechanism leading to large carrier density changes and even concomitant electronic phase transitions with electrolyte gating is under debate. An international team led by Ivan Božović at USA’s Brookhaven National Laboratory and Yale University r...
Enregistré dans:
Auteurs principaux: | X. Leng, J. Pereiro, J. Strle, G. Dubuis, A. T. Bollinger, A. Gozar, J. Wu, N. Litombe, C. Panagopoulos, D. Pavuna, I. Božović |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2017
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/4b95f38d802c4bf39499e86f2dc9b19d |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators
par: S. Kovalev, et autres
Publié: (2021) -
Nematic fluctuations in iron-oxychalcogenide Mott insulators
par: B. Freelon, et autres
Publié: (2021) -
High harmonic generation in two-dimensional Mott insulators
par: Christopher Orthodoxou, et autres
Publié: (2021) -
The bulk-corner correspondence of time-reversal symmetric insulators
par: Sander Kooi, et autres
Publié: (2021) -
Wide gap Chern Mott insulating phases achieved by design
par: Hongli Guo, et autres
Publié: (2017)