Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition

We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a con...

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Autores principales:	Michał Sobaszek, Marcin Gnyba, Sławomir Kulesza, Mirosław Bramowicz, Tomasz Klimczuk, Robert Bogdanowicz
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	epitaxial gallium nitride boron-doped diamond heterojunction AFM electronic properties Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/4c24603b3c5746c3bfe75322db523abc
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spelling	oai:doaj.org-article:4c24603b3c5746c3bfe75322db523abc2021-11-11T17:53:43ZBoron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition10.3390/ma142163281996-1944https://doaj.org/article/4c24603b3c5746c3bfe75322db523abc2021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6328https://doaj.org/toc/1996-1944We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition. The diamond/GaN heterojunction was deposited in methane ratio, chamber pressure, temperature, and microwave power at 1%, 50 Torr, 500 °C, and 1100 W, respectively. Two samples with different doping were prepared 2000 ppm and 7000 [B/C] in the gas phase. SEM and AFM analyses revealed the presence of well-developed grains with an average size of 100 nm. The epitaxial GaN substrate-induced preferential formation of (111)-facetted diamond was revealed by AFM and XRD. After the deposition process, the signal of the GaN substrate is still visible in Raman spectroscopy (showing three main GaN bands located at 565, 640 and 735 cm<sup>−1</sup>) as well as in typical XRD patterns. Analysis of the current–voltage characteristics as a function of temperature yielded activation energy equal to 93.8 meV.Michał SobaszekMarcin GnybaSławomir KuleszaMirosław BramowiczTomasz KlimczukRobert BogdanowiczMDPI AGarticleepitaxial gallium nitrideboron-doped diamondheterojunctionAFMelectronic propertiesTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6328, p 6328 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	epitaxial gallium nitride boron-doped diamond heterojunction AFM electronic properties Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	epitaxial gallium nitride boron-doped diamond heterojunction AFM electronic properties Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Michał Sobaszek Marcin Gnyba Sławomir Kulesza Mirosław Bramowicz Tomasz Klimczuk Robert Bogdanowicz Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
description	We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition. The diamond/GaN heterojunction was deposited in methane ratio, chamber pressure, temperature, and microwave power at 1%, 50 Torr, 500 °C, and 1100 W, respectively. Two samples with different doping were prepared 2000 ppm and 7000 [B/C] in the gas phase. SEM and AFM analyses revealed the presence of well-developed grains with an average size of 100 nm. The epitaxial GaN substrate-induced preferential formation of (111)-facetted diamond was revealed by AFM and XRD. After the deposition process, the signal of the GaN substrate is still visible in Raman spectroscopy (showing three main GaN bands located at 565, 640 and 735 cm<sup>−1</sup>) as well as in typical XRD patterns. Analysis of the current–voltage characteristics as a function of temperature yielded activation energy equal to 93.8 meV.
format	article
author	Michał Sobaszek Marcin Gnyba Sławomir Kulesza Mirosław Bramowicz Tomasz Klimczuk Robert Bogdanowicz
author_facet	Michał Sobaszek Marcin Gnyba Sławomir Kulesza Mirosław Bramowicz Tomasz Klimczuk Robert Bogdanowicz
author_sort	Michał Sobaszek
title	Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
title_short	Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
title_full	Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
title_fullStr	Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
title_full_unstemmed	Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
title_sort	boron-doped diamond/gan heterojunction—the influence of the low-temperature deposition
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/4c24603b3c5746c3bfe75322db523abc
work_keys_str_mv	AT michałsobaszek borondopeddiamondganheterojunctiontheinfluenceofthelowtemperaturedeposition AT marcingnyba borondopeddiamondganheterojunctiontheinfluenceofthelowtemperaturedeposition AT sławomirkulesza borondopeddiamondganheterojunctiontheinfluenceofthelowtemperaturedeposition AT mirosławbramowicz borondopeddiamondganheterojunctiontheinfluenceofthelowtemperaturedeposition AT tomaszklimczuk borondopeddiamondganheterojunctiontheinfluenceofthelowtemperaturedeposition AT robertbogdanowicz borondopeddiamondganheterojunctiontheinfluenceofthelowtemperaturedeposition
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition

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