Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition

We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a con...

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Autores principales:	Michał Sobaszek, Marcin Gnyba, Sławomir Kulesza, Mirosław Bramowicz, Tomasz Klimczuk, Robert Bogdanowicz
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	epitaxial gallium nitride boron-doped diamond heterojunction AFM electronic properties Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/4c24603b3c5746c3bfe75322db523abc
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition

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