Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
In this paper, the influence of traps on the dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a sw...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/4d70049b4fca48acb4b6843b84d54b15 |
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